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  solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone:(562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / SFT2907A2 __ __ scre ening 2 / __ = commercial tx = tx level txv = txv level s = s level package gw = gullwing SFT2907A2 series dual microminiature package 600 ma 60 volts dual pnp transistor features: ? high speed switching transistor ? multiple devices reduce board space ? high power dissipation: up to 600 mw ? replacement for 2n2907au ? tx, txv, s-level screening available ? npn complimentary parts available (sft2222a2) maximum ratings symbol value units collector ? emitter voltage v ceo 60 volts collector ? base voltage v cbo 60 volts emitter ? base voltage v ebo 5 volts continuous collector current i c 600 ma power dissipation @ t a = 25oc per device total p d 500 660 mw operating & storage temperature t op & t stg -65 to +200 oc maximum thermal resistance (junction to pcb) r j-pcb 245 oc/w gullwing (gw) note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: tr0031d doc
solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT2907A2 series electrical characteristic 4 / symbol min max units collector ? emitter sustaining voltage i c = 10 ma bv ceo 60 ?? volts collector cutoff current v ce = 30 v i ces ?? 50 na collector cutoff current v cb = 50 v v cb = 60 v v cb = 50 v, t a = 150 oc i cbo ?? 10 10 10 na a a emitter cutoff current v eb = 4.0 v v eb = 5.0 v i ebo ?? 50 10 na a v ce = 10v, i c = 0.1 ma v ce = 10v, i c = 1.0 ma v ce = 10v, i c = 10 ma v ce = 10v, i c = 150 ma v ce = 10v, i c = 500 ma h fe 75 100 100 100 50 ?? 450 ?? 300 ?? dc forward curren t transfer ratio * v ce = 10v, i c = 10 ma, t a = -55oc 50 ?? collector ? emitter saturation voltage * i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma v ce(sat) ?? ?? 0.4 1.6 volts base ? emitter saturation voltage * i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma v be(sat) 0.6 ?? 1.3 2.6 volts frequency transition (small signal current gain) @ f = 100 mhz v ce = 20v, i c = 20ma f t 200 ?? mhz switching times v cc = 30 v, ic =150 ma i b1 =i b2 =15ma, v be(off) = 3v t on t off ?? ?? 45 300 ns output capacitance v ce = 10v, f = 1mhz c ob ?? 8.0 pf input capacitance v ce = 2.0v, f = 1mhz c ib ?? 30 pf notes: * pulse test: pulse width = 300sec, duty cycle = 2% 1 / for ordering information, price, and availability contact factory. 2 / screening per mil-prf-19500 3 / for package outlines contact factory. 4 / unless otherwise specified, all electrical characteristics @25oc. available part numbers: SFT2907A2gw pin assignment package pin 1 pin 2 pin 3 pin 4 pin 5 pin 6 gw collector1 base1 emitter1 collector2 base2 emitter2 note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: tr0031d doc


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